N-Channel Power MOSFET
NTB5860N, NTP5860N, NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
• Low RDS(on) • High Current Capabili...
Description
NTB5860N, NTP5860N, NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
Low RDS(on) High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Current, RqJC
Steady State
TC = 25°C TC = 100°C
Power Dissipation, RqJC
Steady State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS VGS ID
PD
IDM IDMmax TJ, Tstg
60 $20 220 156 283
660 130 −55 to +175
Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH)
IS 130 EAS 735
Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds)
TL 260
Unit V V A
W
A A °C
A mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 s...
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