NVB5860N

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current, RqJC Steady State TC = 25°C TC = 100°C Power Dissipation, RqJC Steady State TC = 25°C Pulsed Drain Current tp = 10 ms Current Limited by Package Operating and Storage Temperature Range VDSS VGS ID PD IDM IDMmax TJ, Tstg 60 $20 220 156 283 660 130 −55 to +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH) IS 130 EAS 735 Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 Unit V V A W A A °C A mJ °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 0.53 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 28 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 s...