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LDTA124ELT3G Dataheets PDF



Part Number LDTA124ELT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTA124ELT3G DatasheetLDTA124ELT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eli.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Supply voltage Input voltage Parameter Output current Symbol VCC VI IO IC(Max.) Limits −50 −40 to +10 −30 −100 Power dissipation PD 200 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA124ELT1G A6B 22 22 3000/Tape & Reel LDTA124ELT3G A6B 22 22 10000/Tape & Reel Unit V V mA mW °C °C LDTA124ELT1G 3 1 2 SOT–23 1 BASE R1 R2 3 COLLECTOR 2 EMITTER zElectrical characteristics (T 25°C) Parameter Symbol Input voltage VI(off) VI(on) Output voltage VO(on) Input current II Output current IO(off) DC current gain GI Input resistance R1 Resistance ratio R2/R1 Transition frequency fT ∗ ∗Characteristics of built-in transistor. Min. − −3 − − − 56 15.4 0.8 − Typ. − − −0.1 − − − 22 1 250 Max. −0.5 − −0.3 −0.36 −0.5 − 28.6 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC=−5V, IO=−100µA VO=−0.2V, IO=−5mA IO/II=−10mA/−0.5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−5mA − − VCE=−10V, IE=5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTA124ELT1G zElectrical characteristic curves INPUT VOLTAGE : VI (on) (V) −100 VO=−0.3V −50 −20 −10 −5 Ta=−40°C 25°C −2 100°C −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) −10m −5m VCC=−5V −2m Ta=100°C −1m 25°C −500µ −40°C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k VO=−5V 500 Ta=100°C 25°C 200 −40°C 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) −1 lO/lI=20 −500m Ta=100°C −200m 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTA124ELT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm 3/3 .


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