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LDTA143ZLT3G Dataheets PDF



Part Number LDTA143ZLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTA143ZLT3G DatasheetLDTA143ZLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143ZLT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost c.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143ZLT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) 3 1 2 SOT-23 1 BASE R1 R2 3 COLLECTOR Parameter Symbol Limits Unit 2 EMITTER Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VI IO IC(Max.) Pd Tj Tstg −50 −30 to +5 −100 −100 200 150 −55 to +150 V V mA mW °C °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA143ZLT1G A6K 4.7 47 3000/Tape & Reel LDTA143ZLT3G A6K 4.7 47 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min. − −1.3 − − − 80 3.29 8 − Typ. − − −0.1 − − − 4.7 10 250 Max. −0.5 − −0.3 −1.8 −0.5 − 6.11 12 − Unit V V mA µA − kΩ − MHz Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−5mA IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA − − VCE=−10V, IE=5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTA143ZLT1G zElectrical characteristic curves INPUT VOLTAGE : VI(on) (V) −100 VO=−0.3V −50 −20 −10 −5 Ta=−40°C 25°C −2 100°C −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) −10m −5m VCC=−5V −2m −1m −500µ −200µ Ta=100°C 25°C −100µ −40°C −50µ −20µ −10µ −5µ −2µ −1µ 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k 500 Ta=100°C 25°C 200 −40°C 100 50 VO=−5V 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) −1 lO/lI=20 −500m Ta=100°C 25°C −200m −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTA143ZLT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm 3/3 .


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