FSB619
Discrete Power & Signal Technologies July 1998
FSB619
C
E B
SuperSOT -3 (SOT-23)
TM
NPN Low Saturation Tran...
FSB619
Discrete Power & Signal Technologies July 1998
FSB619
C
E B
SuperSOT -3 (SOT-23)
TM
NPN Low Saturation
Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
FSB619 50 50 5 2 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Max Characteristic FSB619 PD RθJA Total Device Dissipation* Derate above 25°C Thermal Resistance, Junction to Ambient 500 4 250 mW mW/°C °C/W Units
© 1998 Fairchild Semiconductor Corporation
Page 1 of 2
FSB619
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
NPN Low Saturation
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO ICES Collector-Emitter Breakdown Voltage Collector-Base Breakdown ...