Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Symbol VCBO VCEO VEBO
Limits −50 −50 −5
Collector current
IC −100
Collector Power dissipation Junction temperature
PC 200 Tj 150
Storage temperature
Tstg
−55 to +150
Unit V V V
mA
mW °C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115TLT1G A6U 100
- 3000/Tape & Reel
LDTA115TLT3G A6U 100
- 10000/Tape & Reel
LDTA115TLT1G
3
1 2 SOT–23
1 BASE
R1
3 COLLECTOR
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage Emitter-base breakdown voltage
BVCEO BVEBO
Collector cutoff current
ICBO
Emitter cutoff current Collector-emitter saturation voltage
IEBO VCE(sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
fT ∗
∗Characteristics of built-in transistor
Min. Typ. Max. Unit
Conditions
−50 − − V IC= −50µA
−50 − − V IC= −1mA
−5 − − V IE= −50µA
−
−
−0.5
µA VCB= −50V
−
−
−0.5
µA VEB= −4V
− − −0.3 V IC/IB= −1mA/−0.1mA
100 250 600
− IC= −1mA , VCE= −5V
70 100 130 kΩ
−
− 250 − MHZ VCE= −10V , IE=5mA , f=100MHZ
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LESHAN RADIO COMPANY, LTD. LDTA115TLT1G
DC CURRENT GAIN : hFE CORRECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
1k
VCE=5V
500
200 100
50
Ta=25°C
Ta=100°C
Ta= −40°C
20 10
5
2
1
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. Collector current
1
IC/IB=10/1
500m
200m 100m
Ta=100°C
50m
Ta=25°C
20m 10m
5m
Ta= −40°C
2m
1m
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage vs. Collector current
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LESHAN RADIO COMPANY, LTD. LDTA115TLT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
3/3
.