LDTA114GLT3G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits −50 −50 −5 −100 Unit V V V mA Pc 200 mW Tj 150 °C Tstg −55 to +150 °C LDTA114GLT1G 3 1 2 SOT–23 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA114GLT1G Q1 − 10 3000/Tape & Reel LDTA114GLT3G Q1 − 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −720µA C...