FSB660

FSB660/FSB660A FSB660 / FSB660A C E B SuperSOT -3 (SOT-23) TM PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB660/FSB660A 60 60 5 2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FSB660/FSB660A PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 500 250 mW °C/W Units © 2000 Fairchild Semiconductor International FSB660/FSB660A Rev. B FSB660/FSB660A PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30...