Document
NTB45N06L, NTBV45N06L
Power MOSFET 45 Amps, 60 Volts
Logic Level, N−Channel D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
• Higher Current Rating • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • AEC−Q101 Qualified and PPAP Capable − NTBV45N06L • These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies • Converters • Power Motor Controls • Bridge Circuits
http://onsemi.com
45 AMPERES, 60 VOLTS RDS(on) = 28 mW
N−Channel D
G
S
4 12
3 D2PAK CASE 418B STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT1
4 Drain
NTx 45N06LG AYWW
12 3 Gate Drain Source
NTx45N06L = Device Code x = B or P A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
1 Publication Order Number: NTB45N06L/D
NTB45N06L, NTBV45N06L
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms)
VDSS VDGR
VGS VGS
ID ID IDM
60 60
"15 "20
45 30 150
Vdc Vdc Vdc
Adc Apk
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)
PD 125 W 0.83 W/°C 3.2 W 2.4 W
Operating and Storage Temperature Range
TJ, Tstg
−55 to +175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 40 A, VDS = 60 Vdc, RG = 25 W)
EAS 240 mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)
RqJC RqJA RqJA
°C/W 1.2 46.8 63.2
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
ORDERING INFORMATION Device
Package
Shipping†
NTB45N06LG
D2PAK (Pb−Free)
50 Units / Rail
NTB45N06LT4G
D2PAK (Pb−Free)
800 / Tape & Reel
NTBV45N06LT4G
D2PAK (Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2
NTB45N06L, NTBV45N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
67
− 67.2
Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS IGSS VGS(th)
−− −− −−
1.0 1.8 − 4.7
Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 22.5 Adc)
RDS(on) − 23
Static Drain−to−Source On−Voltage (Note 4) (VGS = 5.0 Vdc, ID = 45 Adc) (VGS = 5.0 Vdc, ID = 22.5 Adc, TJ = 150°C)
VDS(on)
− 1.03 − 0.93
Forward Transconductance (Note 4) (VDS = 8.0 Vdc, ID = 12 Adc)
gFS − 22.8
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss Coss Crss
− 1212 − 352 − 90
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(on)
− 13
Rise Time Turn−Off Delay Time
(VDD = 30 Vdc, ID = 45 Adc, VGS = 5.0 Vdc, RG = 9.1 W) (Note 4)
tr td(off)
− 341 − 36
Fall Time
tf − 158
Gate Charge
(VDS = 48 Vdc, ID = 45 Adc, VGS = 5.0 Vdc) (Note 4)
QT − 23 Q1 − 4.6 Q2 − 14.1
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 45 Adc, VGS = 0 Vdc) (Note 4) (IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
− 1.01 − 0.92
Reverse Recovery Time
(IS = 45 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4)
trr − 56 ta − 30 tb − 26
Reverse Recovery Stored Charge
QRR
− 0.09
3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures.
Max
− −
1.0 10 ±100
2.0 −
28
1.51.