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NTBV45N06L Dataheets PDF



Part Number NTBV45N06L
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTBV45N06L DatasheetNTBV45N06L Datasheet (PDF)

NTB45N06L, NTBV45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • AEC−Q101 Qualified and PPAP Capable − NTBV45N06L • These Devices .

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NTB45N06L, NTBV45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • AEC−Q101 Qualified and PPAP Capable − NTBV45N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits http://onsemi.com 45 AMPERES, 60 VOLTS RDS(on) = 28 mW N−Channel D G S 4 12 3 D2PAK CASE 418B STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT1 4 Drain NTx 45N06LG AYWW 12 3 Gate Drain Source NTx45N06L = Device Code x = B or P A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1 Publication Order Number: NTB45N06L/D NTB45N06L, NTBV45N06L MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) VDSS VDGR VGS VGS ID ID IDM 60 60 "15 "20 45 30 150 Vdc Vdc Vdc Adc Apk Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) PD 125 W 0.83 W/°C 3.2 W 2.4 W Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 40 A, VDS = 60 Vdc, RG = 25 W) EAS 240 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJC RqJA RqJA °C/W 1.2 46.8 63.2 Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). ORDERING INFORMATION Device Package Shipping† NTB45N06LG D2PAK (Pb−Free) 50 Units / Rail NTB45N06LT4G D2PAK (Pb−Free) 800 / Tape & Reel NTBV45N06LT4G D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTB45N06L, NTBV45N06L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 67 − 67.2 Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) IDSS IGSS VGS(th) −− −− −− 1.0 1.8 − 4.7 Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 22.5 Adc) RDS(on) − 23 Static Drain−to−Source On−Voltage (Note 4) (VGS = 5.0 Vdc, ID = 45 Adc) (VGS = 5.0 Vdc, ID = 22.5 Adc, TJ = 150°C) VDS(on) − 1.03 − 0.93 Forward Transconductance (Note 4) (VDS = 8.0 Vdc, ID = 12 Adc) gFS − 22.8 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss − 1212 − 352 − 90 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(on) − 13 Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 45 Adc, VGS = 5.0 Vdc, RG = 9.1 W) (Note 4) tr td(off) − 341 − 36 Fall Time tf − 158 Gate Charge (VDS = 48 Vdc, ID = 45 Adc, VGS = 5.0 Vdc) (Note 4) QT − 23 Q1 − 4.6 Q2 − 14.1 SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 45 Adc, VGS = 0 Vdc) (Note 4) (IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C) VSD − 1.01 − 0.92 Reverse Recovery Time (IS = 45 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4) trr − 56 ta − 30 tb − 26 Reverse Recovery Stored Charge QRR − 0.09 3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. Max − − 1.0 10 ±100 2.0 − 28 1.51.


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