NVD5490NL

NVD5490NL Power MOSFET 60 V, 64 mW, 17 A, Single N−Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation (Note 1) RqJC Continuous Drain Cur- rent 3) RqJA (Notes 1, 2 & Power (Notes Dissipation 1 & 2) RqJA Pulsed Drain Current Current Limited by Package (Note 3) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms TA = 25°C VDSS VGS ID PD ID PD IDM IDmaxpkg 60 "20 17 12 49 24 5.0 3.0 3.4 1.7 71 30 V V A W A W A A Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C Source Current (Body Diode) IS 41 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL(pk) = 9.0 A, L = 1.0 mH, RG = 25 W) EAS 41 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESI...