NVD6828NLT4G

NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation (Note 1) RqJC Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current 2 & 3) RqJA (Notes 1, Power (Notes Dissipation 1 & 2) RqJA Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 90 "20 41 29 83 42 8.7 6.1 3.8 1.9 206 −55 to 175 V V A W A W A °C Source Current (Body Diode) IS 40 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 24.5 A, L = 0.3 mH, RG = 25 W) EAS 90 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − ...