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NVD6824NL Dataheets PDF



Part Number NVD6824NL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NVD6824NL DatasheetNVD6824NL Datasheet (PDF)

NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Note 1) Power Dissipation (Note 1) RqJC Continuous Drain Current RqJ.

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NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Note 1) Power Dissipation (Note 1) RqJC Continuous Drain Current RqJA (Notes 1 & 2) Power (Notes Dissipation 1 & 2) RqJA Pulsed Drain Current Current Limited by Package (Note 3) TC = 25°C Steady TC = 100°C State TC = 25°C TC = 100°C TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms TA = 25°C VDSS VGS ID PD ID PD IDM IDmaxpkg 100 "20 41 29 90 45 8.5 6.0 3.9 1.9 238 60 V V A W A W A A Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C Source Current (Body Diode) IS 41 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 40 A, L = 0.1 mH, RG = 25 W) EAS 80 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) RqJC 1.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. http://onsemi.com V(BR)DSS 100 V RDS(on) 20 mW @ 10 V 23 mW @ 4.5 V D ID 41 A N−Channel G S 4 12 3 DPAK CASE 369C STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 68 24LG 2 1 Drain 3 Gate Source Y WW 6824L G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NVD6824NLT4G DPAK 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 1 1 Publication Order Number: NVD6824NL/D NVD6824NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/TJ VGS = 0 V, ID = 250 mA Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) IDSS IGSS VVDGSS==1000V,V TJ = 25°C TJ = 125°C VDS = 0 V, VGS = "20 V Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH) VGS(TH)/TJ VGS = VDS, ID = 250 mA Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS CHARGES, CAPACITANCES AND GATE RESISTANCES VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Coss Crss QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD SWITCHING CHARACTERISTICS (Note 5) VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, VDS = 80 V, ID = 20 A VGS = 10 V, VDS = 80 V, ID = 20 A VGS = 10 V, VDS = 80 V, ID = 20 A Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time td(off) Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 10 V, VDD = 80 V, ID = 20 A, RG = 2.5 W Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time VSD VGS = 0 V, TJ = 25°C IS = 20 A TJ = 125°C tRR ta VGS = 0 V, dIs/dt = 100 A/ms, tb IS = 20 A Reverse Recovery Charge QRR 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. Min 100 1.5 Typ Max Unit V 92 mV/°C 1.0 100 "100 mA nA −6.5 16.5 18.5 18 2.5 V mV/°C 20 mW 23 S 3468 187 133 34 66 3.5 9.0 18 pF nC 15 ns 55 31 42 0.84 1.2 V 0.71 38 ns 28 10 59 nC http://onsemi.com 2 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NVD6824NL 100 VGS = 10 V 80 TJ = 25°C TYPICAL CHARACTERISTICS 4.5 V 3.8 V 100 3.6 V 80 VDS ≥ 10 V ID, DRAIN CURRENT (A) 60 60 3.4 V 40 3.2 V 40 TJ = 25°C 20 3.0 V 2.8 V 0 012 3 4 5 VDS, DRAIN−TO−SOURCE (V) Figure 1. On−Region Characteristics 20 0 2.0 TJ = 125°C TJ = −55°C 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 4.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.024 0.022 0.020 0.018 0.016 ID = 20 A TJ =.


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