Document
NVD6824NL
Power MOSFET
100 V, 20 mW, 41 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Note 1)
Power Dissipation (Note 1)
RqJC
Continuous Drain Current RqJA (Notes 1 & 2)
Power (Notes
Dissipation 1 & 2)
RqJA
Pulsed Drain Current Current Limited by Package (Note 3)
TC = 25°C Steady TC = 100°C State TC = 25°C
TC = 100°C TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms TA = 25°C
VDSS VGS ID
PD
ID
PD
IDM IDmaxpkg
100 "20
41 29 90 45 8.5 6.0 3.9 1.9 238 60
V V A
W
A
W
A A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to 175
°C
Source Current (Body Diode)
IS 41 A
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 40 A, L = 0.1 mH, RG = 25 W)
EAS 80 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.7 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS 100 V
RDS(on) 20 mW @ 10 V 23 mW @ 4.5 V
D
ID 41 A
N−Channel G
S
4
12 3
DPAK CASE 369C
STYLE 2
MARKING DIAGRAMS & PIN ASSIGNMENT
4 Drain
YWW 68 24LG
2 1 Drain 3 Gate Source
Y WW 6824L G
= Year = Work Week = Device Code = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVD6824NLT4G DPAK 2500/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 1
1
Publication Order Number: NVD6824NL/D
NVD6824NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
IDSS IGSS
VVDGSS==1000V,V
TJ = 25°C TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage Negative Threshold Temperature Coefficient
VGS(TH) VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
Ciss Coss Crss QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 80 V, ID = 20 A
VGS = 10 V, VDS = 80 V, ID = 20 A
VGS = 10 V, VDS = 80 V, ID = 20 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 80 V, ID = 20 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time Charge Time Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 20 A
TJ = 125°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms, tb IS = 20 A
Reverse Recovery Charge
QRR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures.
Min 100
1.5
Typ Max Unit
V 92 mV/°C
1.0 100 "100
mA nA
−6.5
16.5 18.5 18
2.5 V mV/°C
20 mW 23
S
3468 187 133 34
66
3.5 9.0 18
pF nC
15 ns 55 31 42
0.84 1.2
V
0.71
38 ns
28
10
59 nC
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ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NVD6824NL
100 VGS = 10 V 80 TJ = 25°C
TYPICAL CHARACTERISTICS
4.5 V
3.8 V
100
3.6 V
80 VDS ≥ 10 V
ID, DRAIN CURRENT (A)
60 60 3.4 V
40
3.2 V
40
TJ = 25°C
20 3.0 V
2.8 V 0
012 3 4 5
VDS, DRAIN−TO−SOURCE (V) Figure 1. On−Region Characteristics
20 0 2.0
TJ = 125°C
TJ = −55°C
2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics
4.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.024 0.022 0.020 0.018 0.016
ID = 20 A TJ =.