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NVGS3443

ON Semiconductor

Power MOSFET

NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts P−Channel TSOP−6 Features • Ultra Low RDS(on) • Higher Efficiency E...


ON Semiconductor

NVGS3443

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Description
NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts P−Channel TSOP−6 Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package These Devices are Pb−Free and are RoHS Compliant NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Applications Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds VDSS VGS RPqdJA ID IDM RPqdJA ID IDM RqJA Pd ID IDM TJ, Tstg TL −20 "12 244 0.5 −2.2 −10 Volts Volts °C/W Watts Amps Amps 128 °C/W 1.0 Watts −3.1 Amps −14 Amps 62.5 2.0 −4.4 −20 −55 to 150 260 °C/W Watts Amps Amps °C °C Stresses exceeding Maximum Ratings may damag...




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