DatasheetsPDF.com

NTGS3441T1G

ON Semiconductor

Power MOSFET

NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P−Channel TSOP−6 Features • Ultra Low RDS(on) • Higher Efficiency Ext...


ON Semiconductor

NTGS3441T1G

File Download Download NTGS3441T1G Datasheet


Description
NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P−Channel TSOP−6 Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW P−Channel 1256 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds VDSS VGS −20 "8.0 V V RPqdJA ID IDM 244 0.5 −1.65 −10 °C/W W A A RPqdJA ID IDM 128 1.0 −2.35 −14 °C/W W A A RPqdJA ID IDM TJ, Tstg TL 62.5 2.0 −3.3 −20 −55 to 150 260 °C/W W A A °C °C Stresses e...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)