Power MOSFET
NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, P−Channel TSOP−6
Features
• Ultra Low RDS(on) • Higher Efficiency Ext...
Description
NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, P−Channel TSOP−6
Features
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
http://onsemi.com
1 AMPERE 20 VOLTS RDS(on) = 90 mW
P−Channel
1256
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance
Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS) Thermal Resistance
Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS) Thermal Resistance
Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
VDSS VGS
−20 "8.0
V V
RPqdJA ID IDM
244 0.5 −1.65 −10
°C/W W A A
RPqdJA ID IDM
128 1.0 −2.35 −14
°C/W W A A
RPqdJA ID IDM
TJ, Tstg TL
62.5 2.0 −3.3 −20 −55 to 150 260
°C/W W A A °C °C
Stresses e...
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