IRFL024ZPbF

Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of thisdesign area150°Cjunctionoperatingtemperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C iContinuous Drain Current, VGS @ 10V (Silicon Limited) iContinuous Drain Current, VGS @ 10V ™Pulsed Drain Current iPower Dissipation jPower Dissipation iLinear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) hSingle Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter iRθJA Junction-to-Ambient (PCB mount, steady state) jRθJA Junction-to-Ambient (PCB mount, steady state) www.irf.com PD - 95312A IRFL024ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 57.5mΩ S ID = 5.1A SOT-223 Max. 5.1 4.1 41 2.8 1.0 0.02 ± 20 13 32 See Fig.12a, 12b, 15, 16 -55 to + 150 Typ. ––– ––– Max. 45 120 Units A W W/°C V mJ A mJ °C Units °...