Preliminary Datasheet
RJK0215DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switchi...
Preliminary Datasheet
RJK0215DPA
Silicon N Channel Power MOS FET with
Schottky Barrier Diode
High Speed Power Switching
R07DS0207EJ0110 Rev.1.10
Sep 05, 2011
Applications
DC-DC conversion for PC and Server.
Features
Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2))
5 678
1 G1
234 D1 D1 D1
8 G2
4 32 1
MOS1
9 S1/D2
5678
9
S2 S2 S2 56 7
4321 (Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50
3. Tc=25C
MOS1 25 ±20 15 60 15 5 3.1 10 150
–55 to +150
Ratings
MOS2 25 ±20 40 160 40 14 24.5 25 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C °C
R07DS0207EJ0110 Rev.1.10 Sep 05, 2011
Page 1 of 10
RJK0215DPA
Electrical Characteristics
MOS1
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistan...