Power MOSFET
NTR4502P, NVTR4502P
Power MOSFET
−30 V, −1.95 A, Single, P−Channel, SOT−23
Features
• Leading Planar Technology for Lo...
Description
NTR4502P, NVTR4502P
Power MOSFET
−30 V, −1.95 A, Single, P−Channel, SOT−23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm) AEC Q101 Qualified − NVTR4502P These Devices are Pb−Free and are RoHS Compliant
Applications
DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera’s, etc. Battery Charging Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1)
Power Dissipation (Note 1)
t < 10 s TA = 25°C TA = 70°C
t < 10 s
VDSS VGS ID
PD
−30 ±20 −1.95 −1.56 1.25
Continuous Drain Current (Note 1) Power Dissipation (Note 1)
Steady TA = 25°C State
TA = 70°C Steady State
ID PD
−1.13 −0.90
0.4
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)
IDM TJ, TSTG IS TL
−6.8 −55 to
150 −1.25 260
Unit V V A
W
A
W
A °C
A °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
300 °C/W
Junction−to−Ambient – t = 10 s (Note 1)
RqJA
100
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended e...
Similar Datasheet