Power MOSFET
MCH3333A
Power MOSFET –30V, 215mΩ, –2.0A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trenc...
Description
MCH3333A
Power MOSFET –30V, 215mΩ, –2.0A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features Low On-Resistance 1.8V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance
Typical Applications Load Switch
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−30 V
Gate to Source Voltage
VGSS
±10 V
Drain Current (DC)
ID −2.0 A
Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1%
IDP
−8.0 A
Power Dissipation
When mounted on ceramic substrate (1000mm2 × 0.8mm)
PD
0.9 W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient When mounted on ceramic substrate (1000mm2 × 0.8mm)
Symbol RθJA
Value
Unit
138.8 °C/W
www.onsemi.com
VDSS −30V
RDS(on) Max 215mΩ@ −4V 280mΩ@ −2.5V 430mΩ@ −1.8V
ID Max −2A
ELECTRICAL CONNECTION P-Channel
3
1 1 : Gate 2 : Source 3 : Drain
2
PACKING TYPE : TL
MARKING
QU
LOT No. LOT No.
TL
ORDERING INFORMATION
See...
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