ATP113

Ordering number : ENA1755A ATP113 P-Channel Power MOSFET –60V, –35A, 29.5mΩ, Single ATPAK http://onsemi.com Features ON-resistance RDS(on)1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--10V, L=500μH, IAV=--18A *2 L≤500μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --35 --105 50 150 --55 to +150 95 --18 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP113-TL-H 4.6 2.6 0.4 Product & Package Information Package : ATPAK JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP113 LOT No. 6.05 0.7 4.6 1.7 7.3 0.5 9.5 TL 0.5 2 1 0.8 3 0.6 2.3 2.3 0.55 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain Electrical Connection 2,4 1 0.1 ATPAK 3 Semiconductor Components Indust...