BBS3002

Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET –60V, –100A, 5.8mΩ, TO-263-2L/TO-263 http://onsemi.com Features ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive TO-263 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --100 --400 90 150 --55 to +150 340 --60 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage V(...