NP90N03VHG

NP90N03VHG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0128EJ0100 Rev.1.00 Sep 24, 2010 Description The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP90N03VHG-E1-AY∗1 NP90N03VHG-E2-AY∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package TO-252, Taping (E1 type) TO-252, Taping (E2 type) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Tstg IAR EAR Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Tch(peak) ≤ 150°C, RG = 25 Ω Ratings 30 ±20 ±90 ±360 105 1.2 175 −55 to +175 41 168 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.43 125 °C/W °C/W R07DS0128EJ0100 Rev.1.00 Sep 24, 2010 Page 1 of 6 NP90N03VHG Electrical Cha...