NP36N055SHE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE, NP36N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A) Low Ciss : Ciss = 2300 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP36N055HHE NP36N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP36N055SHE Note Not for new design. TO-252 (JEDEC) / MP-3ZK ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±36 ±144 Total Power Dissipation (TA = 25°C) PT 1.2 Total Power Dissipation (TC = 25°C) PT 120 Single Avalanche Current Note2 IAS 36 / 33 Single Avalanche Energy Note2 EAS 12 / 108 Channel Temperature Tch 175 Storage Temperature Tstg –55 to + 175 V V A A W W A mJ °C °C (TO-251) (TO-252) Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types ...