IRL8113PbF

PD - 95582 IRL8113PbF IRL8113SPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free VDSS 30V IRL8113LPbF HEXFET® Power MOSFET RDS(on) max Qg (Typ.) 6.0m: 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRL8113 D2Pak IRL8113S Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds fMounting Torque, 6-32 or M3 screw Thermal Resistance Parameter iRθJC Junction-to-Case RθCS fCase-to-Sink, Flat Greased Surface fiRθJA Junction-to-Ambient giRθJA Junction-to-Ambient (PCB Mount) Max. 30 ± 20 h105 74 h 420 110 57 0.76 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. ––– 0.50 ––– ––– Max. 1.32 ––– 62 40 Notes  through ‡ are on page 12 www.irf.com TO-262 IRL8113L Units V A W W/°C °C Units °C/W 1 07/20/04 IRL8113/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Th...