Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95821
IRL8113 IRL8113S IRL8...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95821
IRL8113 IRL8113S IRL8113L
HEXFET® Power MOSFET
VDSS RDS(on) max Qg (Typ.)
30V 6.0m:
23nC
Benefits
l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL8113
D2Pak IRL8113S
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 12 www.irf.com
Max. 30 ± 20
105 h 74 h
420 110 57 0.76 -55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ. ––– 0.50 ––– –––
Max. 1.32 ––– 62 40
TO-262 IRL8113L
Units V A
W W/°C
°C
Units °C/W
1
1/6/04
IRL8113/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Thresho...
Similar Datasheet