Silicon N Channel Power MOS FET
RJK0853DPB
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0081EJ0300 R...
Description
RJK0853DPB
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0081EJ0300 Rev.3.00
Apr 09, 2013
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 6.2 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
5 D
4 1, 2, 3 Source G 4 Gate
5 Drain
SSS 123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3
ch-C
Tch
Tstg
Ratings 80 20 40 160 40 20 53.3 65 1.92 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved.
R07DS0081EJ0300 Rev.3.00 Apr 09, 2013
Page 1 of 6
RJK0853DPB
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage...
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