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NIMD6001N

ON Semiconductor

Dual N-Channel Driver

NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-s...


ON Semiconductor

NIMD6001N

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Description
NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed approximately 50 V, a logic 1 (> 3 V) will be asserted on the Diagnostic/Feedback pin. Internal isolation diodes permit the Disable and Diagnostic/ Feedback pins of multiple devices to be interconnected in a “wired-OR” configuration without additional components. Features RDSON 110 mW Maximum at VGS = 10 V Avalanche Energy Specified Gate Drive Disable Input Drain-Source Voltage Diagnostic Feedback Output Electrically Isolated Drains for Low Crosstalk Internal Resistors Limit Peak Transient gate Current AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Automotive Injector Driver Solenoid / Relay Driver MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage (DC, sustained) Gate−to−Source Voltage Continuous Drain Current VGS = 10 V, RqJA = 55°C/W VGS = 5.0 V, RqJA = 55°C/W Single Pulse Drain Current Pulse duration = 80 ms VDSS VGS ID ID 60 "20 3.3 3.0 10 Vdc Vdc A A Single Pulse Drain-to-Source Avalanche Energy VDD = 60 V; VGS = 10 V; IPK = 2.6 A; L = 76 mH; Start Tj = 25°C EAS 258 mJ Operating Junction Temperature TJ ...




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