NGD18N45CLB
Ignition IGBT
18 Amps, 450 Volts
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) f...
NGD18N45CLB
Ignition IGBT
18 Amps, 450 Volts
N−Channel DPAK
This Logic Level Insulated Gate Bipolar
Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage High Pulsed Current Capability Emitter Ballasting for Short−Circuit Capability This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous @ TC = 25°C − Pulsed
VCES VCER VGE
IC
500 VDC 500 VDC 18 VDC 18 ADC 50 AAC
ESD (Human Body Model) R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 400 V
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD 115 Watts 0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not ...