NGB15N41ACL

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VCES VCER VGE IC 440 VDC 440 VDC 15 VDC 15 ADC 50 AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD kV 8.0 ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 107 Watts 0.71 W/°C Operating and Storage Temperature Range...