NGB18N40CLB, NGB18N40ACLB
Ignition IGBT 18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Tran...
NGB18N40CLB, NGB18N40ACLB
Ignition IGBT 18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar
Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
Ideal for Coil−on−Plug Applications Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage High Pulsed Current Capability Integrated Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
VCES 430 VDC
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous @ TC = 25°C − Pulsed
ESD (Human Body Model) R = 1500 W, C = 100 pF
VCER 430 VDC
VGE
18 VDC
IC 18 ADC 50 AAC
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD
800
V
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD 115 W 0.77 W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage...