NGB18N40CLB

NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil−on−Plug Applications Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF VCER 430 VDC VGE 18 VDC IC 18 ADC 50 AAC ESD kV 8.0 ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 W 0.77 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage...