NGD8205NT4G

NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil−on−Plug and Driver−on−Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) These are Pb−Free Devices Applications Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VCES VCER VGE IC 390 390 "15 20 50 V V V ADC AAC Continuous Gate Current Transient Gate Current (t≤2 ms, f≤100 Hz) ESD (Charged−Device Model) IG IG ESD 1.0 mA 20 mA 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD kV 8.0 ESD (Machine Model) R = 0 W, C = 200 pF ESD 400 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 125 W 0.83 W/°C Operating & ...