RJK0856DPB

RJK0856DPB 80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1057EJ0200 (Previous: REJ03G1885-0100) Rev.2.00 Apr 11, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel to Case Thermal Resistance ch-C Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at L=10uH, Tch = 25C, Rg  50  3. Tc = 25C Ratings 80 20 35 140 35 35 16 65 1.92 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS1057EJ0200 Rev.2.00 Apr 11, 2013 Page 1 of 6 RJK0856DPB Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise tim...