Silicon N Channel Power MOS FET
RJK1056DPB
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Low dr...
Description
RJK1056DPB
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Low drive current Low on-resistance
RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Halogen-free High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
4 G
Preliminary Datasheet
R07DS1059EJ0200 (Previous: REJ03G1888-0100)
Rev.2.00 Apr 11, 2013
5 D
SSS 123
1, 2, 3 Source 4 Gate 5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings 100 20 25 100 25 25 6.3 65 1.92 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS1059EJ0200 Rev.2.00 Apr 11, 2013
Page 1 of 6
RJK1056DPB
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise ti...
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