Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N055KUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N055KUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP60N055KUG
TO-263 (MP-25ZK)
FEATURES
• Channel temperature 175 degree rating • Super low on-state resistance
RDS(on) = 9.4 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 3700 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±60 ±240
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C) Channel Temperature
PT2 88 Tch 175
Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2
Tstg −55 to +175 IAR 27 EAR 73
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
V V A A W W °C °C A mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.70 83.3
°C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16862EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan
2004
NP60N055KUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 55 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
VGS(th) | yfs | RDS(on)
VDS = VGS, ID = 250 µA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 30 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 44 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge Body Diode Forward Voltage Note
QGD VF(S-D)
ID = 60 A IF = 60 A, VGS = 0 V
Reverse Recovery Time
trr IF = 60 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
2.0 11
TYP.
3.0 22 7.4 3700 270 160 30 44 79 8 61 14 20 0.94 38 41
MAX. 1
±100 4.0
9.4 5600 410 290
66 110 160 20 92
1.5
UNIT µA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG PG.
VGS 0
τ
τ = 1 µs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
2 Data Sheet D16862EJ1V0DS
NP60N055KUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
dT - Percentage of Rated Power - %
100
80
60
40
20
0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(on) Limited (at VGS = 10 V)
ID(pulse) = 240 A
PW = 100 µs
PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C
ID - Drain Current - A
10 ID(DC) = 60 A
1 ms
DC
1
TC = 25°C Single pulse
0.1 0.1
1
10 ms
10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
Rth(ch-A) = 83.3°C/W 10
rth(t) - Transient Thermal Resistance - °C/W
1 Rth(ch-C) = 1.70°C/W
0.1
0.01
100 µ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse 100 1000
Data Sheet D16862EJ1V0DS
3
ID - Drain Current - A
VGS(th) - Gate to Source Threshold Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 Pulsed
200 VGS = 10 V
100
0 0123456789
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
4.0
3.5
VDS = VGS ID = 250 µA
3.0 Pulsed
2.5
2.0
1.5
1.0
0.5
0 -100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
30 Pulsed
25
20
15
10 VGS = 10 V
5
0 1 10 100 1000
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
NP60N055KUG
FORWARD TRANSFER CHARACTERISTICS
1000 100
VDS = 10 V Pulsed
10 TA = −55°C 25°C
1 75°C 125°C
0.1 175°C
0.01
0.001 0
123456 VGS - Gate to Source Voltage - V
7
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
TA = −50°C 25°C
10 125°C 175°C
1
VDS = 10 V Pulsed
0 0.1
1
10
100
ID - Drain Current - A
1000
DRAIN TO SO.