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NP60N055KUG Dataheets PDF



Part Number NP60N055KUG
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOS FET
Datasheet NP60N055KUG DatasheetNP60N055KUG Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N055KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N055KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP60N055KUG TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 9.4 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 3700 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to So.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N055KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N055KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP60N055KUG TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 9.4 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 3700 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±60 ±240 Total Power Dissipation (TA = 25°C) PT1 1.8 Total Power Dissipation (TC = 25°C) Channel Temperature PT2 88 Tch 175 Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg −55 to +175 IAR 27 EAR 73 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.70 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16862EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004 NP60N055KUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(th) | yfs | RDS(on) VDS = VGS, ID = 250 µA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A Input Capacitance Ciss VDS = 25 V Output Capacitance Coss VGS = 0 V Reverse Transfer Capacitance Crss f = 1 MHz Turn-on Delay Time td(on) VDD = 28 V, ID = 30 A Rise Time tr VGS = 10 V Turn-off Delay Time td(off) RG = 0 Ω Fall Time tf Total Gate Charge QG VDD = 44 V Gate to Source Charge QGS VGS = 10 V Gate to Drain Charge Body Diode Forward Voltage Note QGD VF(S-D) ID = 60 A IF = 60 A, VGS = 0 V Reverse Recovery Time trr IF = 60 A, VGS = 0 V Reverse Recovery Charge Note Pulsed Qrr di/dt = 100 A/µs MIN. 2.0 11 TYP. 3.0 22 7.4 3700 270 160 30 44 79 8 61 14 20 0.94 38 41 MAX. 1 ±100 4.0 9.4 5600 410 290 66 110 160 20 92 1.5 UNIT µA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD BVDSS ID VDD IAS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. RG PG. VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D16862EJ1V0DS NP60N055KUG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 RDS(on) Limited (at VGS = 10 V) ID(pulse) = 240 A PW = 100 µs PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C ID - Drain Current - A 10 ID(DC) = 60 A 1 ms DC 1 TC = 25°C Single pulse 0.1 0.1 1 10 ms 10 VDS - Drain to Source Voltage - V 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.3°C/W 10 rth(t) - Transient Thermal Resistance - °C/W 1 Rth(ch-C) = 1.70°C/W 0.1 0.01 100 µ 1m 10 m 100 m 1 10 PW - Pulse Width - s Single pulse 100 1000 Data Sheet D16862EJ1V0DS 3 ID - Drain Current - A VGS(th) - Gate to Source Threshold Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 Pulsed 200 VGS = 10 V 100 0 0123456789 VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4.0 3.5 VDS = VGS ID = 250 µA 3.0 Pulsed 2.5 2.0 1.5 1.0 0.5 0 -100 -50 0 50 100 150 200 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 25 20 15 10 VGS = 10 V 5 0 1 10 100 1000 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S ID - Drain Current - A NP60N055KUG FORWARD TRANSFER CHARACTERISTICS 1000 100 VDS = 10 V Pulsed 10 TA = −55°C 25°C 1 75°C 125°C 0.1 175°C 0.01 0.001 0 123456 VGS - Gate to Source Voltage - V 7 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 TA = −50°C 25°C 10 125°C 175°C 1 VDS = 10 V Pulsed 0 0.1 1 10 100 ID - Drain Current - A 1000 DRAIN TO SO.


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