DATA SHEET
MOS FIELD EFFECT TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect
Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES Logic level Super low on-state resistance
- NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PDG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
High current rating ID(DC) = ±80 A
Low input capacitance Ciss = 4600 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-220) (TO-262) (TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19795EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP80N04MDG, NP80N04...