IRFS4020PbF

PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features Key parameters optimized for Class-D audio amplifier applications Low RDSON for improved efficiency Low QG and QSW for better THD and improved efficiency Low QRR for better THD and lower EMI 175°C operating junction temperature for ruggedness Can deliver up to 300W per channel into 8Ω load in Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. 200 85 18 6.7 RG(int) typ. TJ max 3.2 175 D D D V mΩ nC nC Ω °C half-bridge configuration amplifier G DS G DS G S D2Pak IRFS4020PbF TO-262 IRFSL4020PbF GDS Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @...