DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE, NP34N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTI...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP34N055HHE, NP34N055IHE, NP34N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect
Transistors designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated Super low on-state resistance
RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) Low Ciss : Ciss = 1600 pF TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HHE NP34N055IHE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP34N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±34 ±136
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2
PT 88 IAS 34 / 27 / 10 EAS 11 / 72 / 100
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V V A A W W A mJ °C °C
(TO-251) (TO-252)
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.70 °C/W 125 °C/W
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