FDMS8320LDC

FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET October 2012 FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET 40 V, 130 A, 1.1 mΩ Features „ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications „ OringFET / Load Switching „ Synchronous Rectification „ DC-DC Conversion Pin 1 S D D D D S S D D G S S S Pin 1 S G Top Power 56 Bottom D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 40 ±20 130 44 300 661 125 3.2 -55 to +150 Units V V A mJ W °C RθJC RθJC RθJA Rθ...