N-Channel Dual Cool Power Trench MOSFET
FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET
October 2012
FDMS8320LDC
N-Channel Dual CoolTM Power Trench® M...
Description
FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET
October 2012
FDMS8320LDC
N-Channel Dual CoolTM Power Trench® MOSFET
40 V, 130 A, 1.1 mΩ
Features
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
Pin 1
S
D D D D
S S
D D
G S S S
Pin 1
S G
Top
Power 56
Bottom
D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 4) (Note 3)
(Note 1a)
Ratings 40 ±20 130 44 300 661 125 3.2
-55 to +150
Units V V
A
mJ W °C
RθJC RθJC RθJA Rθ...
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