Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2731UT1A
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A)
• Low Ciss: Ciss = 3620 pF TYP. • Small and surface mount package (8pin HVSON)
0.42
+0.1 −0.05
1.27
0.10 M
PACKAGE DRAWING (Unit: mm)
1
2 3 4
8 7 6 5
6 ±0.2
5.4 ±0.2
5 ±0.2 5.15 ±0.2
0.10 S
0.27 ±0.05 1.0 MAX.
+0.05 −0
0
ORDERING INFORMATION
PART NUMBER μ PA2731UT1A-E1-AZ Note μ PA2731UT1A-E2-AZ Note
PACKAGE 8pin HVSON 8pin HVSON
4.1 ±0.2
1 0.2
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
Note Pb-free (This product does not contain Pb in external electrode.)
3.65 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
0.6 ±0.15
0.7 ±0.15
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
Drain Current (DC) Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
ID(DC) ID(pulse)
PT1 PT2
m44 m180 1.5
4.6
Channel Temperature
Tch 150
Storage Temperature Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +150 IAS −22 EAS 48
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
V V A A W W °C °C A mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G17640EJ1V0DS00 (1st edition) Date Published January 2006 NS CP(K) Printed in Japan
2005
μ PA2731UT1A
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Drain to Source On-state Resistance Note
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge
IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on)
tr td(off)
tf QG QGS QGD VF(S-D) trr Qrr
VDS = −30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = −10 V, ID = −1 mA VGS = −10 V, ID = −22 A VGS = −4.5 V, ID = −22 A VDS = −10 V
VGS = 0 V f = 1 MHz
VDD = −15 V, ID = −22 A VGS = −10 V
RG = 10 Ω
VDD = −24 V VGS = −10 V ID = −44 A
IF = 44 A, VGS = 0 V IF = 44 A, VGS = 0 V di/dt = 50 A/μs
−1.0
Note Pulsed
TYP.
2.6 4.2 3620 1540 630 15 16 760 510 149 17 48 0.85 87 60
MAX.
−1 m100 −2.5
3.3 6.4
UNIT
μA nA V mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω
L
PG. VGS = −20 → 0 V
50 Ω
VDD
− IAS BVDSS VDS
ID VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG PG.
VGS(−) 0
τ
τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS(−)
VGS
Wave Form
10% 0
VDS(−) 90%
VDS VDS Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = −2 mA
PG. 50 Ω
RL VDD
2 Data Sheet G17640EJ1V0DS
μ PA2731UT1A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
80
FORWARD BIAS SAFE OPERATING AREA - 1000
ID(pulse) - 100
ID(DC)
PW
=
R VGSDS(=on)−Li10mitV)ed
ID - Drain Current - A
dT - Percentage of Rated Power - %
100μ1sms 10
ms P1o0w0 mers1D0isssipation
60 - 10
40
20
0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C
(at
-1
TA = 25°C Single Pulse
Mounted on a galass epoxy board (25.4mm × 25.4mm × 0.8mm)
- 0.1
- 0.01
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
- 100
Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000 Single pulse
100
Rth(ch−A) = 83.3°C/W
rth(t) - Transient Thermal Resistance - °C/W
10 Rth(ch−C) = 1.5°C/W
1
ID - Drain Current - A
- 200
0.1
Rth(ch−A) : Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10 100
1000
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS - 1000
ID - Drain Current - A
- 150
VGS = −10 V
- 100
−4.5 V
- 100 - 10 -1
Tch = 150°C 75°C 25°C
−55°C
- 50
Pulsed 0
0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 VDS - Drain to Source .