IRF6710S2TRPbF

PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible   DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques  8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.8V l 100% Rg tested Applicable DirectFET Outline and Substrate Outline  S1 DirectFET™ ISOMETRIC S1 S2 SB M2 M4 L4 L6 L8 Description The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in s...