Document
EMI4183MU
Common Mode Filter with ESD Protection
Functional Description The EMI4183MU is an integrated common mode filter providing
both ESD protection and EMI filtering for high speed digital serial interfaces such as MIPI D-PHY.
The EMI4183MU provides protection for three differential data line pairs in a small RoHS-compliant UDFN16 package.
Features
• Highly Integrated Common Mode Filter (CMF) with ESD Protection
provides protection and EMI reduction for systems using High Speed Serial Data Lines with cost and space savings over discrete solutions
• Large Differential Mode Bandwidth with Cutoff Frequency > 2 GHz • High Common Mode Stop Band Attenuation: >25 dB at 700 MHz,
>30 dB at 800 MHz
• Provides ESD Protection to IEC61000-4-2 Level 4, ±15 kV Contact
Discharge
• Low Channel Input Capacitance Provides Superior Impedance
Matching Performance
• Low Profile Package with Small Footprint in UDFN16 2 x 4 mm
Pb−Free Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• MIPI D-PHY (CSI-2, DSI, etc) in Mobile Phones and Digital Still
Cameras
1
2 External 4 (Connector) 5
7
8
16
15 13
12 10
9 Internal (ASIC)
3, 14
6, 11
Figure 1. EMI4183MU Electrical Schematic
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MARKING DIAGRAMS
UDFN16 CASE 517CK
U3MG G
U3 = Specific Device Code M = Date Code G = Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
In_1+ 1
16 Out_1+
In_1− 2
15 Out_1−
GND 3
14 GND
In_2+ In_2−
4 5
13 Out_2+ 12 Out_2−
GND 6
11 GND
In_3+ 7
10 Out_3+
In_3− 8
9 Out_3−
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
EMI4183MUTAG UDFN16 3000/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 0
1
Publication Order Number: EMI4183MU/D
EMI4183MU
PIN FUNCTION DESCRIPTION
Pin Name
Pin No.
In_1+
1
In_1−
2
Out_1+
16
Out_1−
15
In_2+
4
In_2−
5
Out_2+
13
Out_2−
12
In_3+
7
In_3−
8
Out_3+
10
Out_3−
9
GND
3, 14
GND
6, 11
Type I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O GND GND
Description CMF Channel 1+ to Connector (External) CMF Channel 1− to Connector (External) CMF Channel 1+ to ASIC (Internal) CMF Channel 1− to ASIC (Internal) CMF Channel 2+ to Connector (External) CMF Channel 2− to Connector (External) CMF Channel 2+ to ASIC (Internal) CMF Channel 2− to ASIC (Internal) CMF Channel 3+ to Connector (External) CMF Channel 3− to Connector (External) CMF Channel 3+ to ASIC (Internal) CMF Channel 3− to ASIC (Internal) Ground Ground
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter
Symbol
Value
Unit
Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 seconds)
TOP TSTG
TL
−40 to +85 −65 to +150
260
°C °C °C
DC Current per Line
ILINE
100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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EMI4183MU
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
ILEAK VF CIN
RCH
Channel Leakage Current Channel Negative Voltage Channel Input Capacitance to Ground (Pins 1,2,4,5,7,8 to Pins 3,6,11,14) Channel Resistance (Pins 1−16, 2−15, 4−13, 5−12, 7−10 & 8−9)
TA = 25°C, VIN = 5 V, GND = 0 V TA = 25°C, IF = 10 mA TA = 25°C, At 1 MHz, GND = 0 V, VIN = 1.65 V
1.0 mA 0.1 1.5 V
0.8 1.3 pF
8.0 W
f3dB Fatten VESD
Differential Mode Cut−off Frequency Common Mode Stop Band Attenuation In−system ESD Withstand Voltage a) Contact discharge per IEC 61000−4−2
standard, Level 4 (External Pins) b) Contact discharge per IEC 61000−4−2
standard, Level 1 (Internal Pins)
50 W Source and Load Termination @ 800 MHz (Notes 1 and 2)
±15 ±2
2.0 30
GHz dB kV
VCL
TLP Clamping Voltage (See Figure 12)
RDYN
Dynamic Resistance Positive Transients Negative Transients
Forward Forward
IIPPPP
= =
8A 16 A
Forward IPP = −8 A
Forward IPP = −16 A
TA = 25°C, IPP = 1 A, tP = 8/20 ms Any I/O pin to Ground; (Notes 1 and 3)
12 18 −6 −12 1.36 0.6
V V V V
VRWM Reverse Working Voltage
(Note 3)
5.0 V
VBR Breakdown Voltage
IT = 1 mA; (Note 4)
5.6 9.0 V
1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC
or continuous peak operating voltage level. 4. VBR is measured at pulse test current IT.
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EMI4183MU
TYPICAL CHARACTERISTICS
Figure 2. Differential Mode Attenuation vs..