DatasheetsPDF.com

EMI4183MU Dataheets PDF



Part Number EMI4183MU
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Common Mode Filter
Datasheet EMI4183MU DatasheetEMI4183MU Datasheet (PDF)

EMI4183MU Common Mode Filter with ESD Protection Functional Description The EMI4183MU is an integrated common mode filter providing both ESD protection and EMI filtering for high speed digital serial interfaces such as MIPI D-PHY. The EMI4183MU provides protection for three differential data line pairs in a small RoHS-compliant UDFN16 package. Features • Highly Integrated Common Mode Filter (CMF) with ESD Protection provides protection and EMI reduction for systems using High Speed Serial Data.

  EMI4183MU   EMI4183MU



Document
EMI4183MU Common Mode Filter with ESD Protection Functional Description The EMI4183MU is an integrated common mode filter providing both ESD protection and EMI filtering for high speed digital serial interfaces such as MIPI D-PHY. The EMI4183MU provides protection for three differential data line pairs in a small RoHS-compliant UDFN16 package. Features • Highly Integrated Common Mode Filter (CMF) with ESD Protection provides protection and EMI reduction for systems using High Speed Serial Data Lines with cost and space savings over discrete solutions • Large Differential Mode Bandwidth with Cutoff Frequency > 2 GHz • High Common Mode Stop Band Attenuation: >25 dB at 700 MHz, >30 dB at 800 MHz • Provides ESD Protection to IEC61000-4-2 Level 4, ±15 kV Contact Discharge • Low Channel Input Capacitance Provides Superior Impedance Matching Performance • Low Profile Package with Small Footprint in UDFN16 2 x 4 mm Pb−Free Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • MIPI D-PHY (CSI-2, DSI, etc) in Mobile Phones and Digital Still Cameras 1 2 External 4 (Connector) 5 7 8 16 15 13 12 10 9 Internal (ASIC) 3, 14 6, 11 Figure 1. EMI4183MU Electrical Schematic http://onsemi.com MARKING DIAGRAMS UDFN16 CASE 517CK U3MG G U3 = Specific Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) PIN CONNECTIONS In_1+ 1 16 Out_1+ In_1− 2 15 Out_1− GND 3 14 GND In_2+ In_2− 4 5 13 Out_2+ 12 Out_2− GND 6 11 GND In_3+ 7 10 Out_3+ In_3− 8 9 Out_3− (Top View) ORDERING INFORMATION Device Package Shipping† EMI4183MUTAG UDFN16 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 0 1 Publication Order Number: EMI4183MU/D EMI4183MU PIN FUNCTION DESCRIPTION Pin Name Pin No. In_1+ 1 In_1− 2 Out_1+ 16 Out_1− 15 In_2+ 4 In_2− 5 Out_2+ 13 Out_2− 12 In_3+ 7 In_3− 8 Out_3+ 10 Out_3− 9 GND 3, 14 GND 6, 11 Type I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O GND GND Description CMF Channel 1+ to Connector (External) CMF Channel 1− to Connector (External) CMF Channel 1+ to ASIC (Internal) CMF Channel 1− to ASIC (Internal) CMF Channel 2+ to Connector (External) CMF Channel 2− to Connector (External) CMF Channel 2+ to ASIC (Internal) CMF Channel 2− to ASIC (Internal) CMF Channel 3+ to Connector (External) CMF Channel 3− to Connector (External) CMF Channel 3+ to ASIC (Internal) CMF Channel 3− to ASIC (Internal) Ground Ground ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 seconds) TOP TSTG TL −40 to +85 −65 to +150 260 °C °C °C DC Current per Line ILINE 100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 EMI4183MU ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit ILEAK VF CIN RCH Channel Leakage Current Channel Negative Voltage Channel Input Capacitance to Ground (Pins 1,2,4,5,7,8 to Pins 3,6,11,14) Channel Resistance (Pins 1−16, 2−15, 4−13, 5−12, 7−10 & 8−9) TA = 25°C, VIN = 5 V, GND = 0 V TA = 25°C, IF = 10 mA TA = 25°C, At 1 MHz, GND = 0 V, VIN = 1.65 V 1.0 mA 0.1 1.5 V 0.8 1.3 pF 8.0 W f3dB Fatten VESD Differential Mode Cut−off Frequency Common Mode Stop Band Attenuation In−system ESD Withstand Voltage a) Contact discharge per IEC 61000−4−2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000−4−2 standard, Level 1 (Internal Pins) 50 W Source and Load Termination @ 800 MHz (Notes 1 and 2) ±15 ±2 2.0 30 GHz dB kV VCL TLP Clamping Voltage (See Figure 12) RDYN Dynamic Resistance Positive Transients Negative Transients Forward Forward IIPPPP = = 8A 16 A Forward IPP = −8 A Forward IPP = −16 A TA = 25°C, IPP = 1 A, tP = 8/20 ms Any I/O pin to Ground; (Notes 1 and 3) 12 18 −6 −12 1.36 0.6 V V V V VRWM Reverse Working Voltage (Note 3) 5.0 V VBR Breakdown Voltage IT = 1 mA; (Note 4) 5.6 9.0 V 1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR is measured at pulse test current IT. http://onsemi.com 3 EMI4183MU TYPICAL CHARACTERISTICS Figure 2. Differential Mode Attenuation vs..


APM8601 EMI4183MU EMI4183MUTAG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)