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EMI8143 Dataheets PDF



Part Number EMI8143
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Common Mode Filter
Datasheet EMI8143 DatasheetEMI8143 Datasheet (PDF)

EMI8141, EMI8142, EMI8143 Common Mode Filter with ESD Protection Functional Description The EMI814x is a family of Common Mode Filters (CMF) with integrated ESD protection, a first in the industry. Differential signaling I/Os can now have both common mode filtering and ESD protection in one package. The EMI814x protects against ESD pulses up to ±15 kV contact per the IEC61000−4−2 standard. The EMI814x is well−suited for protecting systems using high−speed differential ports such as USB 3.0, MI.

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EMI8141, EMI8142, EMI8143 Common Mode Filter with ESD Protection Functional Description The EMI814x is a family of Common Mode Filters (CMF) with integrated ESD protection, a first in the industry. Differential signaling I/Os can now have both common mode filtering and ESD protection in one package. The EMI814x protects against ESD pulses up to ±15 kV contact per the IEC61000−4−2 standard. The EMI814x is well−suited for protecting systems using high−speed differential ports such as USB 3.0, MIPI D−PHY; corresponding ports in removable storage, and other applications where ESD protection are required in a small footprint package. The EMI814x is available in a RoHS−compliant, XDFN6 for 1 Differential Pair, XDFN−10 for 2 Differential Pair and XDFN−16 package for 3 Differential Pair. Features • Total Insertion Loss DMLOSS < 2.5 dB at 2.5 GHz • Large Differential Mode Cutoff Frequency f3dB > 5 GHz • High Common Mode Stop Band Attenuation: > 10 dB at 500 MHz , 15 dB at 700 MHz • Low Channel Resistance 6.0 W • Provides ESD Protection to IEC61000−4−2 Level 4, ±15 kV Contact • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • USB 3.0 • MHL 2.0 • mSD Card • eSATA • HDMI/DVI Display in Mobile Phones • MIPI D−PHY (CSI−2, DSI, etc) in Mobile Phones and Digital Still Cameras http://onsemi.com XDFN6 XDFN10 CASE 711AV CASE 711AU XDFN16 CASE 711AW MARKING DIAGRAMS 4A M G 1 XX M G 42 M G 11 = Specific Device Code = Date Code = Pb−Free Package 43 M G ELECTRICAL SCHEMATICS EMI8142 Figure 1. EMI8141 Electrical Schematic © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 0 1 EMI8143 ORDERING INFORMATION Device Package Shipping† EMI8141MUTAG XDFN6 3000 / Tape & Reel EMI8142MUTAG XDFN10 3000 / Tape & Reel EMI8143MUTAG XDFN16 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: EMI8141/D EMI8141, EMI8142, EMI8143 PIN FUNCTION DESCRIPTION Device Pin Pin Name EMI8141 EMI8142 In_1+ 1 1 In_1− 2 2 Out_1+ 6 10 Out_1− 5 9 In_2+ NA 4 In_2− NA 5 Out_2+ NA 7 Out_2− NA 6 In_3+ NA NA In_3− NA NA Out_3+ NA NA Out_3− NA NA VN 3,4 3, 8 EMI8143 1 2 16 15 4 5 13 12 7 8 10 9 3,6,14,11 Type I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O GND Description CMF Channel 1+ to Connector (External) CMF Channel 1− to Connector (External) CMF Channel 1+ to ASIC (Internal) CMF Channel 1− to ASIC (Internal) CMF Channel 2+ to Connector (External) CMF Channel 2− to Connector (External) CMF Channel 2+ to ASIC (Internal) CMF Channel 2− to ASIC (Internal) CMF Channel 3+ to Connector (External) CMF Channel 3− to Connector (External) CMF Channel 3+ to ASIC (Internal) CMF Channel 3− to ASIC (Internal) Ground ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 seconds) TOP TSTG TL −40 to +85 −65 to +150 260 °C °C °C DC Current per Line ILINE 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. http://onsemi.com 2 EMI8141, EMI8142, EMI8143 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit VRWM Reverse Working Voltage (Note 3) 3.3 V VBR Breakdown Voltage IT = 1 mA; (Note 4) 4.0 9.0 V ILEAK Channel Leakage Current TA = 25°C, VIN = 3.3 V, GND = 0 V 1.0 mA RCH Channel Resistance (Pins 1−6, 2−5) − EMI8141 (Pins 1−10, 2−9, 4−7 and 5−6) − EMI8142 (Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8143 6.0 W DMLOSS Differential Mode Insertion Loss f3dB Differential Mode Cut-off Frequency @ 2.5 GHz 50 W Source and Load Termination 2.5 dB 5.0 GHz Fatten VESD Common Mode Stop Band Attenuation In-system ESD Withstand Voltage a) Contact discharge per IEC 61000-4-2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000-4-2 standard, Level 1 (Internal Pins) @ 700 MHz (Notes 1 and 2) 15 ±15 ±2 dB kV VCL TLP Clamping Voltage Forward IPP = 8 A Forward IPP = 16 A Forward IPP = −8 A Forward IPP = −16 A 7.26 V 11.8 −3.5 −6.7 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operatin.


EMI8142 EMI8143 EMI8141MUTAG


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