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NZF220DFT1G

ON Semiconductor

EMI Filter

NZF220DFT1G, SNZF220DFT1G EMI Filter with ESD Protection Features • 2 EMI/RFI Bi−directional “Pi” Low−Pass Filters • ES...


ON Semiconductor

NZF220DFT1G

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Description
NZF220DFT1G, SNZF220DFT1G EMI Filter with ESD Protection Features 2 EMI/RFI Bi−directional “Pi” Low−Pass Filters ESD Protection Meets IEC61000−4−2 Diode Capacitance: 7 − 10 pF Zener/Resistor Line Capacitance: 22 ±20% pF Low Zener Diode Leakage: 1 mA Maximum Zener Breakdown Voltage; 6 − 8 V AEC−Q101 Qualified and PPAP Capable − SNZF220DFT1G S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb−Free Devices Benefits Designed to suppress EMI/RFI Noise in Systems Subjected to Electromagnetic Interference Nominal Cutoff Frequency of 220 MHz (per Figure 2) Small Package Size Minimizes Parasitic Inductance, Thus a More “Ideal” Low Pass Filtering Response Typical Applications Cellular Phones Communication Systems Computers Portable Products with Input/Output Conductors MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) 8 × 20 ms Pulse PPK 14 W Maximum Junction Temperature TJ 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Between I/O Pins © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 9 1 http://onsemi.com CIRCUIT DESCRIPTION Pin 4 Pin 5 ...




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