N-Channel and P-Channel Silicon MOSFETs
Ordering number : ENA1809
FW906
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
Genera...
Description
Ordering number : ENA1809
FW906
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive
N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤100ms) Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID ID ID IDP PD PT Tch
Tstg
Conditions
Duty cycle≤1% Duty cycle≤1% Duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
N-channel P-channel 30 --30
±20 ±20 8 --6 9 --7
20 --15 52 --52
2.3 2.5 150 --55 to +150
Unit V V A A A A W W °C °C
Package Dimensions unit : mm (typ) 7005A-003
5.0 85
0.2
Product & Package Information
Package
: SOP8
JEITA, JEDEC
: SC-87, SOT96
Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
1.8 MAX 1.5 6.0 0.7 0.8 4.4 0.8 0.3
1 1.27
0.1
1 : Source1 2 : Gate1 3 : Source2 4 4 : Gate2 0.43 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
TL
Electrical Connection
8765
W906
LOT No.
SANYO : SOP8
1234
http://semicon.sanyo.com/en/network
72110PA TK IM TC-00002248 No. A1809-1/6
Electrical Characteristics at Ta=25°C
FW906
Parameter
Symbol
[N-channel] Drain-t...
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