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3DD13005KD1

JILIN SINO-MICROELECTRONICS

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005KD1 MAIN CHARACTERISTICS IC VCEO PC(TO-220) 4A 400V ...


JILIN SINO-MICROELECTRONICS

3DD13005KD1

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Description
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005KD1 MAIN CHARACTERISTICS IC VCEO PC(TO-220) 4A 400V 75W Package z z z z z APPLICATIONS z Energy-saving ligh z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier z z z z z(RoHS) FEATURES z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD13005KD1-O-Z-N-C Marking D13005KD1 Halogen Free NO Package TO-220 Packaging Bag :200910C 1/5 R ABSOLUTE RATINGS (Tc=25℃) 3DD13005KD1 Parameter Symbol Value — Collector- Emitter Voltage(VBE=0) VCES 700 — Collector- Emitter Voltage(IB=0) VCEO 400 — Emitter-Base Voltage VEBO 9 Collector Current(DC) IC 4 Collector Current(pulse) ICP 8 Base Current(DC) IB 2 Base Current(pulse) IBP 4 Total Dissipation (TO-220) PC 75 Junction Temperature Tj 150 Storage Temperature Tstg -55~+150 :pulse5ms。 Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. Unit V V V A A A A W ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Hfe(1) Hfe(2) VCE(sat)(1) VCE(sat)(2) VBE(sat) tf ts fT Tests conditions IC=10mA,IB=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=700V, IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE =10V, IC=500mA VCE =5V, IC=2A IC=1A, IB=0.2A IC=4A, IB=1A IC=2A, IB=0.5A VCC=24V IC=2A,IB1=-IB2=0.4A VCE=10V, IC=0.5A Value(min) 400 700 9 8 5 4 Value...




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