DatasheetsPDF.com

LDTB114TLT1G Dataheets PDF



Part Number LDTB114TLT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTB114TLT1G DatasheetLDTB114TLT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

  LDTB114TLT1G   LDTB114TLT1G


Document
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. • S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −40 −5 −500 200 150 −55 to +150 Unit V V V mA mW C C LDTB114TLT1G S-LDTB114TLT1G 3 1 2 SOT-23 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB114TLT1G S-LDTB114TLT1G LDTB114TLT3G S-LDTB114TLT3G K3 K3 10 10 3000/Tape & Reel 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff curren Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Min. −50 −40 −5 − − − 100 7 − Typ. − − − − − − 250 10 200 Max. − − − −0.5 −0.5 −0.3 600 13 − Unit V V V µA µA V − kΩ MHz Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −50V VEB= −4V IC/IB= −50mA/−2.5mA IC= −50mA , VCE= −5V − VCE= −10V , IE=50mA , f=100MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB114TLT1G ;S-LDTB114TLT1G zElectrical characteristic curves DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k VCE=5V 500 Ta=25°C Ta=100°C 200 100 Ta= −40°C 50 20 10 5 2 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current 1 IC/IB=20/1 500m 200m 100m 50m 20m 10m 5m Ta=25°C Ta=100°C Ta= −40°C 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. Collector current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB114TLT1G ;S-LDTB114TLT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm Rev.O 3/3 .


LDTB143TLT3G LDTB114TLT1G LDTB114TLT3G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)