Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits −50 −40 −5 −500 200 150 −55 to +150
Unit V V V mA
mW C C
LDTB114TLT1G S-LDTB114TLT1G
3 1
2
SOT-23
1 BASE R1
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114TLT1G S-LDTB114TLT1G
LDTB114TLT3G S-LDTB114TLT3G
K3 K3
10 10
3000/Tape & Reel 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff curren Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R1
fT ∗
Min. −50 −40 −5
− − − 100 7 −
Typ. − − − − − −
250 10 200
Max. − − −
−0.5 −0.5 −0.3 600 13
−
Unit V V V µA µA V − kΩ
MHz
Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −50V VEB= −4V IC/IB= −50mA/−2.5mA IC= −50mA , VCE= −5V
− VCE= −10V , IE=50mA , f=100MHz
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LDTB114TLT1G ;S-LDTB114TLT1G
zElectrical characteristic curves
DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1k VCE=5V
500
Ta=25°C
Ta=100°C
200
100
Ta= −40°C
50
20 10
5
2
1 500µ 1m 2m
5m 10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. Collector current
1 IC/IB=20/1
500m
200m 100m 50m
20m 10m 5m
Ta=25°C
Ta=100°C
Ta= −40°C
2m
1m 500µ 1m 2m
5m 10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs. Collector current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LDTB114TLT1G ;S-LDTB114TLT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
Rev.O 3/3
.