PowerTrench MOSFET. FDMS86152 Datasheet

FDMS86152 Datasheet PDF, Equivalent


Part Number

FDMS86152

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86152 Datasheet PDF


FDMS86152 Datasheet
FDMS86152
N-Channel PowerTrench® MOSFET
100 V, 45 A, 6 mΩ
February 2013
Features
General Description
„ Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
„ Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Pin 1
Top
Bottom
Pin 1
SSSG
DDDD
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
45
14
260
541
125
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.0
45
°C/W
Device Marking
FDMS86152
Device
FDMS86152
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
1
www.fairchildsemi.com

FDMS86152 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
90 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 14 A
VGS = 6 V, ID = 11.5 A
VGS = 10 V, ID = 14 A, TJ = 125 °C
VDS = 10 V, ID = 14 A
2
3 4V
-10 mV/°C
5.2 6
7.3 11 mΩ
8.7 10
42 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
2530
595
22
0.9
3370
795
35
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 14 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V VDD = 50 V,
ID = 14 A
17
6
25
5
36
23
10.7
7.2
30
12
39
10
50
33
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 14 A
(Note 2)
(Note 2)
IF = 14 A, di/dt = 100 A/μs
0.70
0.78
59
74
1.2
1.3
94
119
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 45 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 42 A.
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86152 N-Channel PowerTrench® MOSFET FDMS86152 N-Channel PowerTrench® MOS FET 100 V, 45 A, 6 mΩ February 2013 Features General Description „ Max r DS(on) = 6 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A „ Advanced Package and Sil icon combination for low rDS(on) and hi gh efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor ‘s advanced Power Trench® process th ant has been especially tailored to min imize the on-state resistance and yet m aintain superior switching performance. „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applicat ions „ Primary DC-DC MOSFET „ Seconda ry Synchronous Rectifier „ Load Switc h Pin 1 Top Bottom Pin 1 SSSG DDDD S S S G D D D D Power 56 MOSFET Maxi mum Ratings TA = 25 °C unless otherwis e noted Symbol VDS VGS ID EAS PD TJ, T STG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche E.
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