Document
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l Lead-Free
PD - 95333A
IRF3707ZPbF
IRF3707ZSPbF
IRF3707ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 9.5m
9.7nC
Benefits
l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
TO-220AB
D2Pak
TO-262
IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage
gContinuous Drain Current, VGS @ 10V gContinuous Drain Current, VGS @ 10V Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount)
Notes through are on page 12 www.irf.com
Max. 30 ± 20
59i 42i
230 57 28
0.38 -55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ. ––– 0.50 ––– –––
Max. 2.653 –––
62 40
Units V A
W W/°C
°C
Units °C/W
1
05/08/08
IRF3707Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient
30 ––– ––– 0.023 ––– 7.5 ––– 10 1.35 1.80 ––– -5.3
––– ––– 9.5 12.5 2.25 –––
V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 21A eVGS = 4.5V, ID = 17A
V VDS = VGS, ID = 25µA mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance Qg Total Gate Charge
81 ––– ––– ––– 9.7 15
S VDS = 15V, ID = 17A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 2.8 –––
VDS = 15V
––– 1.0 ––– nC VGS = 4.5V
––– 3.4 –––
ID = 17A
––– 2.5 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.4 –––
Qoss td(on) tr td(off)
Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time
––– 6.2 ––– nC VDS = 16V, VGS = 0V
––– 9.8 –––
eVDD = 15V, VGS = 4.5V
––– 41 –––
ID = 17A
––– 12 ––– ns Clamped Inductive Load
tf Fall Time
––– 3.6 –––
Ciss Input Capacitance
––– 1210 –––
VGS = 0V
Coss Output Capacitance
––– 260 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 130 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy ÃIAR Avalanche Current EAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 40 23 5.7
Units mJ A mJ
Diode Characteristics
iParameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 59
MOSFET symbol
D
(Body Diode) ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 230
A showing the integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 17A, VGS = 0V
e––– 14 21 ns TJ = 25°C, IF = 17A, VDD = 15V
––– 5.2 7.8 nC di/dt = 100A/µs
2 www.irf.com
ID, Drain-to-Source Current (A)
IRF3707Z/S/LPbF
1000 100
TOP BOTTOM
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
10 3.0V
1 0.1
30µs PULSE WIDTH Tj = 25°C
1 VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1000 100
TOP BOTTOM
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
10
30V
1 0.1
30µs PULSE WIDTH Tj = 175°C
1 VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
1000 100
TJ = 25°C
TJ = 175°C
10.0
VDS = 10V 30µs PULSE WIDTH
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 42A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
3
IRF3707Z/S/LPbF
C, Capacitance(pF)
100000 10000 1000 100
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd
Ciss Coss Crss
10 1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100
VGS, Gate-to-Source Voltage (V)
6.0 ID= 17A
5.0
4.0
VDS= 24V VDS= 15V
3.0
2.0
1.0
0.0 0
2 4 6 8 10 QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
12
ISD, Reverse Drain Current (A)
1000.00
100.00
10.00
TJ = 175°C
1.00
TJ = 25°C
0.10
0.01 0.0
VGS = 0V
0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode Forward Voltage
4
.