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IRF3707ZSPbF Dataheets PDF



Part Number IRF3707ZSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3707ZSPbF DatasheetIRF3707ZSPbF Datasheet (PDF)

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95333A IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.5m 9.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD .

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95333A IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.5m 9.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage gContinuous Drain Current, VGS @ 10V gContinuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount) Notes  through ‡ are on page 12 www.irf.com Max. 30 ± 20 59i 42i 230 57 28 0.38 -55 to + 175 300 (1.6mm from case) x x10 lbf in (1.1 N m) Typ. ––– 0.50 ––– ––– Max. 2.653 ––– 62 40 Units V A W W/°C °C Units °C/W 1 05/08/08 IRF3707Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– 0.023 ––– 7.5 ––– 10 1.35 1.80 ––– -5.3 ––– ––– 9.5 12.5 2.25 ––– V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 21A eVGS = 4.5V, ID = 17A V VDS = VGS, ID = 25µA mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 81 ––– ––– ––– 9.7 15 S VDS = 15V, ID = 17A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– 2.8 ––– VDS = 15V ––– 1.0 ––– nC VGS = 4.5V ––– 3.4 ––– ID = 17A ––– 2.5 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 4.4 ––– Qoss td(on) tr td(off) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ––– 6.2 ––– nC VDS = 16V, VGS = 0V ––– 9.8 ––– eVDD = 15V, VGS = 4.5V ––– 41 ––– ID = 17A ––– 12 ––– ns Clamped Inductive Load tf Fall Time ––– 3.6 ––– Ciss Input Capacitance ––– 1210 ––– VGS = 0V Coss Output Capacitance ––– 260 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ÙIAR Avalanche Current ™EAR Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 40 23 5.7 Units mJ A mJ Diode Characteristics iParameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 59 MOSFET symbol D (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– 230 A showing the integral reverse G ––– ––– 1.0 p-n junction diode. S eV TJ = 25°C, IS = 17A, VGS = 0V e––– 14 21 ns TJ = 25°C, IF = 17A, VDD = 15V ––– 5.2 7.8 nC di/dt = 100A/µs 2 www.irf.com ID, Drain-to-Source Current (A) IRF3707Z/S/LPbF 1000 100 TOP BOTTOM VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 10 3.0V 1 0.1 30µs PULSE WIDTH Tj = 25°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1000 100 TOP BOTTOM VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 10 30V 1 0.1 30µs PULSE WIDTH Tj = 175°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (Α) 1000 100 TJ = 25°C TJ = 175°C 10.0 VDS = 10V 30µs PULSE WIDTH 2345678 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 42A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF3707Z/S/LPbF C, Capacitance(pF) 100000 10000 1000 100 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd Ciss Coss Crss 10 1 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 VGS, Gate-to-Source Voltage (V) 6.0 ID= 17A 5.0 4.0 VDS= 24V VDS= 15V 3.0 2.0 1.0 0.0 0 2 4 6 8 10 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 12 ISD, Reverse Drain Current (A) 1000.00 100.00 10.00 TJ = 175°C 1.00 TJ = 25°C 0.10 0.01 0.0 VGS = 0V 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) 2.0 Fig 7. Typical Source-Drain Diode Forward Voltage 4 .


IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF


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