IRF3707ZLPbF

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95333A IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.5m 9.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage gContinuous Drain Current, VGS @ 10V gContinuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount) Notes  through ‡ are on page 12 www.irf.com Max. 30 ± 20 59i 42i 230 57 28 0.38 -55 to + 175 300 (1.6mm from case) x x10 lbf in (1.1 N m) Typ. ––– 0.50 ––– ––– Max. 2.653 ––– 62 40 Units V A W W/°C °C Units °C/W 1 05/08/08 IRF3707Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-R...