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NRVTS245ESFT1G

ON Semiconductor

Very Low Forward Voltage Trench-based Schottky Rectifier

NRVTS245ESF Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky...


ON Semiconductor

NRVTS245ESFT1G

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Description
NRVTS245ESF Very Low Forward Voltage Trench-based Schottky Rectifier Features Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices Mechanical Characteristics: Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 Typical Applications Switching Power Supplies including Compact Adapters and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation Automotive LED Lighting http://onsemi.com TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 45 VOLTS SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM 2AEMG G 2AE = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NRVTS245ESFT1G SOD−123 3,000/ (Pb−Free) Tape & Reel NRVTS245ESFT3G SOD−123 10,000/ (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and ...




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