FSGYC260R

FSGYC260R TM Data Sheet May 2000 File Number 4851.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured. TM Features 56A, 200V, rDS(ON) = 0.033Ω UIS Rated Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS Photo Current - 17nA Per-RAD (Si)/s Typically Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 The Intersil family of Star*Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. St...